schottky barrier diode rb215t-40 ? applications ? dimensions (unit : mm) ? structure switching power supply ? features 1) cathode common dual type.(to-220) 2) low i r 3) high reliability ? construction silicon epitaxial planar ? absolute maximum ratings (ta=25? c) symbol unit reverse voltage (repetitive peak) v rm v v r v average rectified forward current(*1) io a forward current surge peak (60hz/1cyc) (*1) i fsm a tj ? c tstg ? c ? electrical characteristic (ta=25? c) symbol min. typ. max. unit v f - - 0.55 v i f =10a reverse current i r - - 500 a v r =40v thermal impedance ? jc - - 1.75 ? c/w junction to case conditions junction temperature 150 storage temperature ? 40 to ? 150 parameter forward voltage parameter limits 45 reverse voltage (dc) 40 20 100 (*1)business frequencies, 1/2 io per diode, tc=121 ? c (1) (2) (3) 215 4 1/3 2011.04 - rev.e data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb215t-40 ? electrical characteristics curves 0 10 20 30 0 10203040 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=100ma i f =10a 300us time mounted on epoxy board 10 100 1000 11 01 0 0 t ifsm 0 5 10 15 20 25 30 ave:27.4ns ta=25 ? c i f =0.5a i r =1a irr=0.25*i r n=10pcs 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 100 200 300 400 500 600 700 800 900 1000 450 460 470 480 490 500 1 10 100 1000 10000 0 5 10 15 20 25 30 f=1mhz 0.1 1 10 100 1000 10000 100000 1000000 0 5 10 15 20 25 30 35 40 0.01 0.1 1 10 0 100 200 300 400 500 600 forward voltage:v f (mv) v f -i f characteristics forward current:i f (a) reverse current:i r (ua) reverse voltage:v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( ? c/w) forward power dissipation:pf(w) average rectified forward current:io(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) ta=-25 ? c ta=125 ? c ta=25 ? c ta=150 ? c ta=-25 ? c ta=25 ? c ta=75 ? c ta=150 ? c ave:472.9mv ta=25 ? c i f =3a n=30pcs ta=25 ? c v r =40v n=30pcs ave:78.7ua 2450 2460 2470 2480 2490 2500 2510 2520 2530 2540 2550 ave:2515.6pf ta=25 ? c f=1mhz v r =0v n=10pcs 0 50 100 150 200 250 300 ave:176.0a 8.3ms ifsm 1cyc dc d=1/2 sin( ? =180) ta=125 ? c ta=75 ? c i fsm dispersion map 2/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb215t-40 0 2 4 6 8 10 0 10203040 d=1/2 dc sin( ? =180) 0 10 20 30 40 50 0 25 50 75 100 125 150 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics ambient temperature:ta( ? c) derating curve"(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve"(io-tc) 0 10 20 30 40 50 0 255075100125150 t tj=150 ? c d=t/t t v r io v r =20v 0a 0v t tj=150 ? c d=t/t t v r io v r =20v 0a 0v d=1/2 sin( ? =180) dc sin( ? =180) d=1/2 dc 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k ? c=200pf r=0 ? ave:25.7kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.04 - rev.e www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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